Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades
Author:
Affiliation:
1. Electrical and Computer Engineering Department, University of California, Santa Barbara; California 93106 USA
2. Materials Department, University of California, Santa Barbara; California 93106 USA
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552550/fullpdf
Reference26 articles.
1. S. Nakamura S. F. Chichibu 2000
2. Design and characterization of GaN∕InGaN solar cells
3. GaN Electronics
4. Critical thickness calculations for InGaN/GaN
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