RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO-Reference-Cited by-同舟云学术

RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO

Published:2018-12-12 Issue:5 Volume:256 Page:1800364
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Jozwik Przemyslaw¹,Magalhães Sergio¹,Ratajczak Renata²^ORCID,Mieszczynski Cyprian²,Sequeira Miguel¹^ORCID,Turos Andrzej³,Böttger Roman⁴,Heller Rene⁴,Lorenz Katharina⁵^ORCID,Alves Eduardo¹

Affiliation:

1. IPFN, Instituto Superior TécnicoUniversidade de LisboaEstrada Nacional 102695‐066 BobadelaPortugal

2. National Centre for Nuclear Research A. Soltana 705‐400 Otwock‐SwierkPoland

3. Institute of Electronic Materials TechnologyWolczynska 13301‐919 WarsawPoland

4. Helmholtz Zentrum Dresden‐RossendorfBautzner Landstraße 40001328 DresdenGermany

5. INESC‐MN, IPFNInstituto Superior TécnicoUniversidade de LisboaEstrada Nacional 102695‐066 BobadelaPortugal

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800364

Reference30 articles.

1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

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3. The temperature dependence of the luminescence of rare-earth-doped semiconductors: 25 years after Favennec

4. Effect of the density of collision cascades on ion implantation damage in ZnO

5. Structural and photoluminescence properties of Gd implanted ZnO single crystals

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