Lattice dynamics of layered semiconducting compound TlGaS2-Reference-Cited by-同舟云学术

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Lattice dynamics of layered semiconducting compound TlGaS2

Published:2010-09-24 Issue:1 Volume:248 Page:181-186
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Ulubey Kulibekov A. M.,Hashimzade F. M.,Huseinova D. A.,Nizametdinova M. A.,Orudzhev G. S.,Allakhverdiev K. R.,Yıldız N. T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Untersuchungen �ber tern�re Chalkogenide. XXIV. Zur Struktur des TlGaSe2

2. High-pressure Raman study of the ternary chalcogenides TlGaS2, TlGaSe2, TlInS2, and TlInSe2

3. Raman and Infrared Spectra of TlGaSe2

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness dependence of dielectric properties of TlGaS2 thin films;Materials Science in Semiconductor Processing;2023-11

2. New cation-disordered quaternary selenides Tl2Ga2 TtSe6 (Tt=Ge, Sn);Zeitschrift für Naturforschung B;2019-12-09

3. Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals;Physica B: Condensed Matter;2013-07

4. Lattice dynamics of Ferroelectric TlInS2 crystal;Canadian Journal of Physics;2012-05

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