New cation-disordered quaternary selenides Tl2Ga2 TtSe6 (Tt=Ge, Sn)

Author:

Babizhetskyy Volodymyr1,Levytskyy Volodymyr1,Smetana Volodymyr2,Wilk-Kozubek Magdalena23,Tsisar Oksana4,Piskach Lyudmyla4,Parasyuk Oleg4,Mudring Anja-Verena2

Affiliation:

1. Department of Inorganic Chemistry , Ivan Franko National University of Lviv , Kyryla and Mefodiya Street 6, UA-79005 Lviv , Ukraine

2. Department of Materials and Environmental Chemistry , Stockholm University , Svante Arrhenius väg 16C , Stockholm 10691 , Sweden

3. ŁUKASIEWICZ Research Network – PORT Polish Center for Technology Development , 147 Stabłowicka Street , 54-066 Wrocław , Poland

4. Department of Inorganic and Physical Chemistry , Lesya Ukrainka Eastern European National University , 13 Voli av. , 43025 Lutsk , Ukraine

Abstract

Abstract Two new quaternary selenides of the α-TlSe structure type have been synthesized and characterized. Single crystal X-ray diffraction analysis has revealed that Tl2Ga2SnSe6 crystallizes with space group I4/mmc, a = 8.095(1), c = 6.402(1) Å, with a refined composition of Tl1− x Ga1− y Sn y Se2 (x = y = 0.345(5)), Z = 4, R1 = 0.028; wR2 = 0.066. The crystal structure of the isostructural compound Tl2Ga2GeSe6 has been determined by means of powder X-ray diffraction: space group I4/mmc, Z = 4, a = 8.0770(4), c = 6.2572(5) Å, refined composition Tl1− x Ga1− y Ge y Se2, x = 0.343(5), y = 0.35(2), (R B(I)  = 0.084; R P  = 0.041; R Pw  = 0.058). According to their optical absorption spectra all compounds are semiconductors with relatively narrow direct band gaps of 2.15(3) and 2.05(5) eV for the Ge and Sn phase, respectively.

Publisher

Walter de Gruyter GmbH

Subject

General Chemistry

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