Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N-Reference-Cited by-同舟云学术

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Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N

Published:2020-04 Issue:4 Volume:257 Page:1900612
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Casamento Joseph¹^ORCID,Xing Huili Grace¹²³,Jena Debdeep¹²³

Affiliation:

1. Department of Materials Science and EngineeringCornell University Ithaca NY 14853 USA

2. School of Electrical & Computer EngineeringCornell University Ithaca NY 14853 USA

3. Kavli Institute at Cornell for Nanoscale ScienceCornell University Ithaca NY 14853 USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900612

Reference32 articles.

1. The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

2. A.Teshigahara K. Y.Hashimoto M.Akiyama inIEEE Int. Ultrasonics Symp. (Dresden Germany 2012) IEEE Washington DC USA2013.

3. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

4. Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

5. ScGaN and ScAlN: emerging nitride materials

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4. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films;Journal of Alloys and Compounds;2024-08

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