Nanosecond-scale time-resolved electron imaging during laser crystallization of GeTe-Reference-Cited by-同舟云学术

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Nanosecond-scale time-resolved electron imaging during laser crystallization of GeTe

Published:2012-09-27 Issue:10 Volume:249 Page:1907-1913
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Santala Melissa K.,Reed Bryan W.,Raoux Simone,Topuria Teya,LaGrange Thomas,Campbell Geoffrey H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Phase change materials: From material science to novel storage devices

2. Nanosecond switching in GeTe phase change memory cells

3. Dynamics of laser-induced phase switching in GeTe films

4. Compound materials for reversible, phase‐change optical data storage

5. Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction

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1. Nonvolatile Displays Based on Phase Change Materials;Advanced Optical Materials;2023-09-19

2. Te and Ge solid-state reaction: comparison between the 2D and 3D growth of α-GeTe;Journal of Materials Chemistry C;2023

3. Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques;Journal of Materials Research;2022-03-30

4. Direct Measurement of Crystal Growth Velocity in Epitaxial Phase-Change Material Thin Films;ACS Applied Materials & Interfaces;2019-10-15

5. High-Speed Electron Microscopy;Springer Handbook of Microscopy;2019

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