Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques-Reference-Cited by-同舟云学术

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Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques

Published:2022-03-30 Issue:7 Volume:37 Page:1281-1295
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:Journal of Materials Research

Author:

McGieson Isak,Bird Victoriea L.,Barr Christopher M.,Hattar Khalid,Reed Bryan W.,McKeown Joseph T.,Yi Feng^ORCID,LaVan David A.^ORCID,Santala M. K.

Funder

Directorate for Mathematical and Physical Sciences

National Nuclear Security Administration

Basic Energy Sciences

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1557/s43578-022-00486-5.pdf

Reference55 articles.

1. S.R. Ovshinsky, Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21(20), 1450 (1968)

2. M. Chen, K.A. Rubin, R.W. Barton, Compound materials for reversible, phase-change optical-data storage. Appl. Phys. Lett. 49(9), 502 (1986)

3. Y.V. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems. Adv. Phys. 60(2), 145 (2011)

4. W. Zhang, R. Mazzarello, M. Wuttig, E. Ma, Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat. Rev. Mater. 4(3), 150 (2019)

5. Y.B. Li, Z.R. Wang, R. Midya, Q.F. Xia, J.J. Yang, Review of memristor devices in neuromorphic computing: materials sciences and device challenges. J. Phys. D-Appl. Phys. 51(50), 503002 (2018)

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