Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study-Reference-Cited by-同舟云学术

Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

Published:2016-01-08 Issue:5 Volume:253 Page:889-894
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Belmiloud N.¹,Boutaiba F.¹,Belabbes A.²,Ferhat M.¹,Bechstedt F.³

Affiliation:

1. Département de Génie Physique, Laboratoire de Physique des Matériaux et Fluides (LPMF), Université des Sciences et de la Technologie d'Oran, USTO; Oran Algeria

2. King Abdullah University of Science & Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

3. Institut für Festkörpertheorie & -optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1; 07743 Jena Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552674/fullpdf

Reference52 articles.

1. Band gap reduction in GaNSb alloys due to the anion mismatch

2. Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

3. Growth and characterization of highly mismatched GaN1−xSbx alloys

4. Giant and composition-dependent optical band gap bowing in dilute GaSb1−xNx alloys

5. Enhanced conversion efficiency in wide-bandgap GaNP solar cells

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