Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Published:2017-06-19 Issue:8 Volume:254 Page:1600710
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Staszczak G.¹,Gorczyca I.¹,Grzanka E.¹²,Smalc-Koziorowska J.¹,Targowski G.²,Czernecki R.¹²,Siekacz M.¹²,Grzanka S.¹²,Skierbiszewski C.¹²,Schulz T.³,Christensen N. E.⁴,Suski T.¹

Affiliation:

1. Institute of High Pressure Physics; Sokolowska 29/37 01-142 Warsaw Poland

2. TopGaN Ltd.; Sokolowska 29/37 01-142 Warsaw Poland

3. Leibniz Institute for Crystal Growth; 1248 Berlin Germany

4. Department of Physics and Astronomy; Aarhus University; DK-8000 Aarhus C Denmark

Funder

Narodowym Centrum Nauki

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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