Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy-Reference-Cited by-同舟云学术

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Published:2016-01-18 Issue:5 Volume:253 Page:918-922
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Kolhatkar Gitanjali¹²,Boucherif Abderraouf²,Ataellah Bioud Youcef²,Fafard Simon²,Ruediger Andreas¹,Aimez Vincent²,Arès Richard²

Affiliation:

1. Institut National de la Recherche Scientifique - Énergie, Matériaux et Télécommunications; Université du Québec; 1650 Boulevard Lionel-Boulet J3X 1S2 Varennes Québec Canada

2. Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT); Université de Sherbrooke; 3000 Boulevard Université J1K 0A5 Sherbrooke Québec Canada

Funder

Quebec Fund for Research in Nature and Technology

RQMP

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552617/fullpdf

Reference32 articles.

1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

2. S.R. Kurtz D. Myers J.M. Olson 1997 875

3. 1-eV solar cells with GaInNAs active layer

4. Photocurrent of 1eV GaInNAs lattice-matched to GaAs

5. High-efficiency multijunction solar cells employing dilute nitrides

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