12-bandk · pmodel for dilute bismide alloys of (In)GaAs derived from supercell calculations
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x
2. Valence-band anticrossing in mismatched III-V semiconductor alloys
3. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
4. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
5. Giant Spin-Orbit Bowing inGaAs1−xBix
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1. Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors;Journal of Applied Physics;2023-12-20
2. Criteria for the Use of Approximations for Full Band Structures of Compound III–V Semiconductor Quantum Wells;physica status solidi (b);2022-02-11
3. Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys;Physical Review Applied;2022-01-24
4. Band gap energy of the As-rich InxGa1-xBiyAs1-y depending on composition;Infrared Physics & Technology;2021-06
5. Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core–shell and multi-shell nanowires;Nanoscale;2020
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