Longitudinal and Hall Transport in Amorphous InGaZnO4 Films Prepared by rf Sputtering Method-Reference-Cited by-同舟云学术

Longitudinal and Hall Transport in Amorphous InGaZnO4 Films Prepared by rf Sputtering Method

Published:2017-08-25 Issue:11 Volume:254 Page:1700133
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zhang Hui¹^ORCID,Xie Xin-Jian²,Zhang Xing-Hua²,Liu Xin-Dian¹,Li Zhi-Qing¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physicsand Preparing Technology, Department of Physics, Tianjin University; Tianjin 300354 P.R. China

2. Hebei University of Technology, School of Material Science and Engineering; Tianjin 300130 P.R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

5. Effects of RF Power and Substrate Temperature during RF Magnetron Sputtering on Crystal Quality of ZnO Thin Films

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