The influence of Al content on impurity states in GaN/AlGaN asymmetrically coupled quantum dots
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201046506/fullpdf
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1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
2. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
3. Tunable GaN/AlGaN ultraviolet detectors with built-in electric field
4. Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
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