Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments-Reference-Cited by-同舟云学术

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments

Published:2017-09-25 Issue:11 Volume:254 Page:1700214
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

McManus John B.¹,Hennessy Alison¹,Cullen Conor P.¹,Hallam Toby²,McEvoy Niall¹,Duesberg Georg S.¹³

Affiliation:

1. School Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin; Dublin 2 Ireland

2. School of Electrical and Electronic Engineering, Newcastle University; Newcastle upon Tyne United Kingdom

3. Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr; München Germany

Funder

Irish Research Council

Science Foundation Ireland

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

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3. Plasma nanotechnology: past, present and future;Meyyappan;J. Phys. D: Appl. Phys,2011

4. The effect of downstream plasma treatments on graphene surfaces;Peltekis;Carbon,2012

5. Bandgap opening in oxygen plasma-treated graphene;Nourbakhsh;Nanotechnology,2010

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