Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams-Reference-Cited by-同舟云学术

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Published:2019-05-30 Issue:10 Volume:256 Page:1900104
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Uedono Akira¹,Iguchi Hiroko²,Narita Tetsuo²,Kataoka Keita²,Egger Werner³,Koschine Tönjes³,Hugenschmidt Christoph⁴,Dickmann Marcel⁴,Shima Kohei⁵,Kojima Kazunobu⁵,Chichibu Shigefusa F.⁵,Ishibashi Shoji⁶

Affiliation:

1. Division of Applied PhysicsFaculty of Pure and Applied ScienceUniversity of TsukubaTsukubaIbaraki 305‐8573Japan

2. Toyota Central R&D Labs., Inc.NagakuteAichi 480‐1118Japan

3. Institut für Angewandte Physik und MesstechnikUniversität der Bundeswehr München85577 NeubibergGermany

4. Physics Department E21 and Heinz Maier‐Leibnitz Zentrum (MLZ)Technische Universität München85748 GarchingGermany

5. Institute of Multidisciplinary Research for Advanced MaterialsTohoku UniversitySendai 980‐8577Japan

6. Research Center for Computational Design of Advanced Functional Materials (CD‐FMat)National Institute of Advanced Industrial Science and Technology (AIST)TsukubaIbaraki 305‐8568Japan

Funder

JSPS KAKENHI

MEXT “Program for research and development of next-generation semiconductor to realize energy-saving society”

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900104

Reference46 articles.

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2. Power semiconductor device figure of merit for high-frequency applications