Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon
Author:
Affiliation:
1. University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology; P.O. Box 1048 Blindern; N-0316 Oslo Norway
2. Scientific-Practical Materials Research Center of NAS of Belarus; Minsk 220072; Belarus
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Electronically activated boron-oxygen-related recombination centers in crystalline silicon
2. New Oxygen Infrared Bands in Annealed Irradiated Silicon
3. Oxygen-Related Defects in Silicon
4. IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon
5. Intrinsic Point Defects and Impurities in Silicon Crystal Growth
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1. Oxygen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
2. Oxygen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
3. Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment;Journal of Applied Physics;2015-10-07
4. Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers;Solid State Phenomena;2015-10
5. An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon;Journal of Applied Physics;2015-09-28
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