Morphology of second‐phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth-Reference-Cited by-同舟云学术

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Morphology of second‐phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth

Published:2016-01-22 Issue:4 Volume:253 Page:654-658
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wang Shujie¹,Sun Niefeng¹,Gao Linjie¹,Liu Xinhui¹,Shi Yanlei¹,Li Xiaolan¹,Shao Huimin¹,Wang Yang¹,Fu Lijie¹,Liu Huisheng¹,Sun Tongnian¹

Affiliation:

1. National Key Laboratory of ASICHebei Semiconductor Research InstituteShijiazhuang050051P.R. China

Funder

National Science Foundation

Natural Science Foundation of Tianjin City

Natural Science Foundation of Hebei Province

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201552494

Reference20 articles.

1. Dislocation cell structures in melt-grown semiconductor compound crystals

2. Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique

3. Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

4. Growth of long-length 3 inch diameter Fe-doped InP single crystals

5. Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phosphorus escaping phenomena during the growth of InP crystal by in-situ liquid-encapsulated Czochralski method and P-rich-related defects in InP crystal;Journal of Materials Science: Materials in Electronics;2023-09

2. Rapid in-situ phosphorus injection synthesis of large quantity InP polycrystalline;Journal of Crystal Growth;2022-12

3. Rapid In-Situ Phosphorus Injection Synthesis of Large Quantity Inp Polycrystalline;SSRN Electronic Journal;2022

4. Influence of melt convection on distribution of indium inclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals;Journal of Materials Science: Materials in Electronics;2020-10-01

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