The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure-Reference-Cited by-同舟云学术

The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure

Published:2011-08-31 Issue:1 Volume:249 Page:146-152
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Martínez-Orozco J. C.,Mora-Ramos M. E.,Duque C. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201147301/fullpdf

Reference41 articles.

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5. Simple fit to the ground-state energy of the two-dimensional electron gas in the fractional quantum Hall regime

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