Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states-Reference-Cited by-同舟云学术

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Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states

Published:2013-02-11 Issue:4 Volume:250 Page:779-786
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Pettinari Giorgio,Polimeni Antonio,Capizzi Mario,Engelkamp Hans,Christianen Peter C. M.,Maan Jan C.,Patanè Amalia,Tiedje Thomas

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Growth and properties of the dilute bismide semiconductor GaAs_{1−xBi_{x a complementary alloy to the dilute nitrides}}

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements inGaAs1−xNx

4. Giant Spin-Orbit Bowing inGaAs1−xBix

5. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

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1. Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure;Materials Science in Semiconductor Processing;2023-02

2. High‐Field Electron‐Drift Velocity in n‐Type Modulation‐Doped GaAs_0.96Bi_0.04Quantum Well Structure;physica status solidi (RRL) – Rapid Research Letters;2022-07-13

3. Hot Electron Transport in N-Type Modulation-Doped Al0.15ga0.85as/Gaas0.96bi0.4 Quantum Well Structure;SSRN Electronic Journal;2022

4. GaAsBi: From Molecular Beam Epitaxy Growth to Devices;physica status solidi (b);2021-11-21

5. Photovoltaic performance improvement of GaAs1-xBix nanowire solar cells in terms of light trapping capability and efficiency;Solar Energy;2021-06

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