Crystal orientations of β-Ga2O3thin films formed onm-plane andr-plane sapphire substrates-Reference-Cited by-同舟云学术

Crystal orientations of β-Ga2O3thin films formed onm-plane andr-plane sapphire substrates

Published:2014-12-10 Issue:3 Volume:252 Page:612-620
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Nakagomi Shinji¹,Kaneko Satoru²,Kokubun Yoshihiro¹

Affiliation:

1. Department of Information Technology and Electronics; Faculty of Science and Engineering; Ishinomaki Senshu University; Ishinomaki Miyagi 986-8580 Japan

2. Kanagawa Industrial Technology Center; 705-1 Shimo-imaizumi Ebina Kanagawa 243-0435 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

2. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

3. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

4. Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer

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