Model for carrier capture time through phonon emission in InGaN/GaN quantum wells
Author:
Affiliation:
1. Dipartimento di Elettronica e Telecomunicazioni; Politecnico di Torino, corso Duca degli Abruzzi 24; 10129 Torino Italy
2. IEIIT-CNR; Politecnico di Torino, corso Duca degli Abruzzi 24; 10129 Torino Italy
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
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