Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Published:2017-01-11 Issue:2 Volume:254 Page:1600589
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Hsueh Wei-Jen¹,Chiu Pei-Chin¹,Hong Ming-Hwei²,Chyi Jen-Inn¹³

Affiliation:

1. Department of Electrical Engineering; National Central University; Chung-li 32001 Taiwan, R.O.C

2. Department of Physics; National Taiwan University; Taipei 10617 Taiwan, R.O.C

3. Research Center for Applied Sciences; Academia Sinica; Taipei 11529 Taiwan, R.O.C

Funder

Ministry of Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP