Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy-Reference-Cited by-同舟云学术

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy

Published:2017-10-16 Issue:5 Volume:255 Page:1700322
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Kurai Satoshi¹,Mihara Renma¹,Nobata Genki¹,Okawa Kohei¹,Okada Narihito¹,Tadatomo Kazuyuki¹,Yano Yoshiki²,Tabuchi Toshiya²,Matsumoto Koh²,Yamada Yoichi¹

Affiliation:

1. Graduate School of Science and Technology for Innovation, Yamaguchi University; 2-16-1 Tokiwadai Ube Yamaguchi 755-8611 Japan

2. Taiyo Nippon Sanso Corporation; 10 Ohkubo Tsukuba Ibaraki 300-2611 Japan

Funder

JSPS KAKENHI

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The Blue Laser Diode

2. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

3. Spatially separated intrinsic emission components inInxGa1−xNternary alloys

4. Narrow high‐energy emission lines in high‐resolution near‐field spectroscopy on GaInN/GaN quantum wells

5. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

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2. Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions;Japanese Journal of Applied Physics;2019-05-08

3. Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers;Journal of Applied Physics;2018-08-28

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