Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers-Reference-Cited by-同舟云学术

Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers

Published:2018-08-28 Issue:8 Volume:124 Page:083107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kurai Satoshi¹,Okawa Kohei¹,Makio Ryoga¹,Nobata Genki¹,Gao Junji¹,Sugimoto Kohei¹²,Okada Narihito¹^ORCID,Tadatomo Kazuyuki¹,Yamada Yoichi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

2. Ube Industries, Ltd., 1978-96 Ogushi Ube, Yamaguchi 755-8633, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5043578

Reference27 articles.

1. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

2. High-Quality InGaN Films Grown on GaN Films

3. White light emitting diodes with super-high luminous efficacy

4. Luminescences from localized states in InGaN epilayers

5. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

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3. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells;Journal of Applied Physics;2020-12-14

4. Effect of horizontal p–n junction on optoelectronics characteristics in InGaN-based light-emitting diodes with V-shaped pits;Journal of Physics D: Applied Physics;2020-06-09

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