Use of high-k encapsulation to improve mobility in trap-limited metal-oxide semiconductors-Reference-Cited by-同舟云学术

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Use of high-k encapsulation to improve mobility in trap-limited metal-oxide semiconductors

Published:2017-07-10 Issue:10 Volume:254 Page:1700124
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zeumault Andre¹,Subramanian Vivek¹

Affiliation:

1. Electrical Engineering and Computer Sciences (EECS) Department; University of California; 253 Cory Hall Berkeley CA 94720-1772 USA

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference65 articles.

1. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

2. Amorphous-oxide TFT backplane for large-sized AMOLED TVs

3. Solution processing of transparent conductors: from flask to film

4. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

5. Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors

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1. Bias Temperature Instability of Multilayer ReS ₂ FET with α‐MoO ₃ Passivation;Advanced Materials Interfaces;2022-07-20

2. Study of the Influence of Ga and In Doping on Organic Residuals in Solution-Processed IGZO Thin Films Deposited at Low-Temperature;Transactions on Electrical and Electronic Materials;2021-12-30

3. Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors;Science China Technological Sciences;2020-10-19

4. Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule;Journal of Applied Physics;2019-07-28

5. Solution-processed metal-oxide thin-film transistors: a review of recent developments;Nanotechnology;2019-05-07

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