Forbidden Band‐Edge Excitons of Wurtzite‐GaP: A Theoretical View-Reference-Cited by-同舟云学术

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Forbidden Band‐Edge Excitons of Wurtzite‐GaP: A Theoretical View

Published:2018-08-02 Issue:2 Volume:256 Page:1800238
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Belabbes Abderrezak¹,Bechstedt Friedhelm¹

Affiliation:

1. Institut für Festkörpertheorie und ‐optik, Friedrich‐Schiller‐Universität JenaMax‐Wien‐Platz 107743 JenaGermany

Funder

European Commission

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800238

Reference38 articles.

1. Nanowire-based one-dimensional electronics

2. III–V semiconductor nanowires for optoelectronic device applications

3. Controlled polytypic and twin-plane superlattices in iii–v nanowires

4. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

5. Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

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