Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam-Reference-Cited by-同舟云学术

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

Author:

Uedono Akira¹,Takashima Shinya²,Edo Masaharu²,Ueno Katsunori²,Matsuyama Hideaki²,Kudo Hiroshi³,Naramoto Hiroshi³,Ishibashi Shoji⁴

Affiliation:

1. Division of Applied Physics, Faculty of Pure and Applied Science; University of Tsukuba; Tsukuba, Ibaraki 305-8573 Japan

2. Advanced Technology Lab. Fuji Electric Co., Ltd.; Hino, Tokyo 191-8502 Japan

3. Research Facility Center for Science and Technology; University of Tsukuba; Tsukuba, Ibaraki 305-8573 Japan

4. Nanomaterials Research Institute; National Institute of Advanced Industrial Science and Technology; Tsukuba, Ibaraki 305-8568 Japan

Funder

State Council for Science, Technology and Innovation

Cross-ministerial Strategic Innovation Promotion Program (SIP)

Next-generation power electronics

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献