Chemical tuning of band alignments for Cu/HfO2 interfaces-Reference-Cited by-同舟云学术

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Chemical tuning of band alignments for Cu/HfO2 interfaces

Published:2014-09-15 Issue:2 Volume:252 Page:298-304
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Uttamchandani Rajiv¹²,Zhang Xu¹,Shankar Sadasivan³,Lu Gang¹

Affiliation:

1. Department of Physics and Astronomy; California State University Northridge, Northridge; California 91330 USA

2. Department of Liberal Arts And Sciences; New York Film Academy, Burbank; California 91502 USA

3. Technology and Manufacturing Group; Intel Corporation, Santa Clara; California 95054 USA

Funder

Intel Corporation and NSF-PREM

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451200/fullpdf

Reference25 articles.

1. Growth and thermal annealing of Cu on HfO2

2. First-principles calculation of the TiN effective work function onSiO2and onHfO2

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Chemical tuning of band alignments for metal gate/high-κoxide interfaces

5. First-principles theory of metal-alkaline earth oxide interfaces

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1. Advanced polymeric dielectrics for high energy density applications;Progress in Materials Science;2016-10

2. Formation of Metallic States between Insulating SnO and SnO2;Advanced Materials Interfaces;2016-02-25

3. Charge injection barriers at metal/polyethylene interfaces;Journal of Materials Science;2015-09-02

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