Evidences for ambient oxidation of indium nitride quantum dots-Reference-Cited by-同舟云学术

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Evidences for ambient oxidation of indium nitride quantum dots

Published:2011-08-03 Issue:12 Volume:248 Page:2853-2856
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bhat Thirumaleshwara N.,Rajpalke Mohana K.,Roul Basanta,Kumar Mahesh,Krupanidhi S. B.,Sinha Neeraj

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201147112/fullpdf

Reference24 articles.

1. Low-field electron mobility in wurtzite InN

2. Effective mass of InN epilayers

3. Nonparabolicity effect on bulk transport properties in wurtzite InN

4. On the possibility of streaming transport due to impact ionization in wurtzite InN

5. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis of Size-Tunable Indium Nitride Nanocrystals;The Journal of Physical Chemistry Letters;2023-04-10

2. Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate;Physical Chemistry Chemical Physics;2016

3. Spectroscopic Studies of In₂O₃ Nanostructures; Photovoltaic Demonstration of In₂O₃/p-Si Heterojunction;Journal of Nanoscience and Nanotechnology;2013-01-01

4. Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?;Nanoscale Research Letters;2012-08-31

5. Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing;CrystEngComm;2012

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