Properties of C-doped GaN-Reference-Cited by-同舟云学术

Properties of C-doped GaN

Published:2016-12-26 Issue:8 Volume:254 Page:1600708
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Lesnik Andreas¹,Hoffmann Marc P.¹,Fariza Aqdas¹,Bläsing Jürgen¹,Witte Hartmut¹,Veit Peter¹,Hörich Florian¹,Berger Christoph¹,Hennig Jonas¹,Dadgar Armin¹,Strittmatter André¹

Affiliation:

1. Institut für Experimentelle Physik; Otto-von-Guericke-Universität Magdeburg; Universitätsplatz 2 39106 Magdeburg Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Improving GaN-on-silicon properties for GaN device epitaxy

2. On the origin of free carriers in high-conducting n-GaN

3. Pressure Induced Deep Gap State of Oxygen in GaN

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