Surface Passivation and Emitter Recombination Parameters-Reference-Cited by-同舟云学术

Surface Passivation and Emitter Recombination Parameters

Published:2017-01-07 Issue: Volume: Page:114-124
ISSN:
Container-title:Photovoltaic Solar Energy
language:
Short-container-title:

Author:

Hoex Bram¹

Affiliation:

1. School of Photovoltaic and Renewable Energy Engineering; University of New South Wales; Kensington Australia

Publisher

John Wiley & Sons, Ltd

Reference54 articles.

1. Limiting loss mechanisms in 23-percent efficient silicon solar-cells;Aberle;Journal of Applied Physics,1995

2. Impact of illumination level and oxide parameters recombination at the Si-Si02 interface;Aberle;Journal of Applied Physics,1992

3. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Solar Energy Materials and Solar Cells,2006

4. Altermatt , P.P. Plagwitz , H. Bock , R. et al 2006 The surface recombination velocity at boron-doped emitters: comparison between various passivation techniques Proceedings of the 21st EU-PVSEC 647 651

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system;Progress in Photovoltaics: Research and Applications;2024-06-06

2. High-Efficiency Silicon Solar Cell Concepts;McEvoy's Handbook of Photovoltaics;2018

3. Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements;Journal of Applied Physics;2017-11-21