Affiliation:
1. Information Materials and Intelligent Sensing Laboratory of Anhui Province Anhui University Hefei Anhui 230601 China
2. National Engineering Research Center for Agro‐Ecological Big Data Analysis & Application Anhui University Hefei Anhui 230601 China
3. Jincheng Research Institute of Opo‐mechatronics Industry Jincheng Shanxi 048000 China
4. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems Jincheng Shanxi 048000 China
Abstract
SummaryStatic Random Access Memory (SRAM) is vital in aerospace applications, but it may experience soft errors in strong radiation environments. This paper proposes a reconfigurable radiation SRAM with two operating modes catering to different environmental requirements: (1) traditional triple modular redundancy mode used when the radiation environment is strong and (2) SRAM cell expansion mode used when the radiation is not very strong. For example, when the memory capacity of a single module is 8 k, the memory capacity is 8 k in traditional triple modular redundancy mode, but it can be tripled to 24 K in extended mode. As can be obviously seen, this design can adjust the size according to the needs. In SRAM cell expansion mode, the proposed 14T SRAM cell enables the memory to maintain radiation resistance. Compared with DICE, RHBD‐12T, and WHIT, the read speed is improved by 3.8%, 5.7%, and 11.5% respectively, but compared with WE‐QUATRO, the read speed is reduced by 1.9%. The hold static noise margin is 1.378 times than DICE, 1.201 times than WE‐QUATRO, 1.045 times than RHBD‐12T, and 1.14 times than WHIT, respectively. The proposed 14T cell in this paper exhibits the highest critical charge value compared with the other cells. Combined with the expansion mode of the reconfiguration design, it shows great stability.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials