The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro‐light‐emitting diodes-Reference-Cited by-同舟云学术

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The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro‐light‐emitting diodes

Published:2021-06-28 Issue:12 Volume:29 Page:948-960
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:J Soc Inf Display

Author:

Liu Yibo¹^ORCID,Zhang Ke¹²^ORCID,Feng Feng¹,Chan Ka‐Wah¹³,Yeung Sze‐Yan¹,Kwok Hoi‐Sing¹,Liu Zhaojun¹²³^ORCID

Affiliation:

1. State Key Laboratory of Advanced Displays and Optoelectronics Technologies Hong Kong University of Science and Technology Hong Kong SAR China

2. Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen China

3. Shenzhen Sitan Technology Co., Ltd. Shenzhen China

Funder

Shenzhen Science and Technology Innovation Program

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jsid.1070

Reference40 articles.

1. Wafer-scale monolithic hybrid integration of Si-based IC and III-V epi-layers-A mass manufacturable approach for active matrix micro-LED micro-displays

2. Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology

3. 360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays

4. GaN-based LED micro-displays for wearable applications

5. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes

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3. Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process;Scientific Reports;2024-05-27

4. High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes;physica status solidi (a);2024-05-08

5. High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact;Applied Physics Letters;2024-04-01

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