Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded p ‐ AlGaN Hole Injection Layer-Reference-Cited by-同舟云学术

Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded p ‐ AlGaN Hole Injection Layer

Published:2021-06-07 Issue:15 Volume:218 Page:2100003
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bui Ha Quoc Thang¹²,Dang Hoang Anh¹,Doan Thi Tuyet¹,Velpula Ravi Teja²,Jain Barsha²,Nguyen Hieu Pham Trung²,Nguyen Hoang-Duy¹^ORCID

Affiliation:

1. Institute of Chemical Technology Vietnam Academy of Science and Technology Ho Chi Minh City 700000 Vietnam

2. Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark NJ 07102 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100003

Reference32 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

3. Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

4. Efficiency droop in light-emitting diodes: Challenges and countermeasures

5. Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

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3. High-performance red-emitting InGaN/AlGaN nanowire light-emitting diodes grown through porous template;Materials Science in Semiconductor Processing;2024-01

4. Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures;Journal of Physics D: Applied Physics;2023-11-16

5. Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes;Gallium Nitride Materials and Devices XVIII;2023-03-15