Analysis of Mechanical Strain in AlGaN/GaN HFETs-Reference-Cited by-同舟云学术

Analysis of Mechanical Strain in AlGaN/GaN HFETs

Published:2023-01-22 Issue: Volume: Page:2200683
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Yazdani Hossein¹^ORCID,Graff Andreas²,Simon-Najasek Michél²,Altmann Frank²,Brunner Frank¹,Ostermay Ina¹,Chevtchenko Serguei¹,Würfl Joachim¹

Affiliation:

1. Ferdinand-Braun-Institut gGmbH Leibniz-Institut für Höchstfrequenztechnik (FBH) Gustav-Kirchhoff-Straße 4 12489 Berlin Germany

2. Fraunhofer Institute for Microstructure of Materials and Systems (IMWS) Walter-Huelse-Strasse 1 06120 Halle Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200683

Reference12 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

3. R.Lossy H.Blanck J.Würfl in2014 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS Mantech) Denver Colorado US2014 pp.193–196.

4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

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