The Impact of Contact Position on the Retention Performance in Thin‐Film Ferroelectric Transistors-Reference-Cited by-同舟云学术

The Impact of Contact Position on the Retention Performance in Thin‐Film Ferroelectric Transistors

Published:2021-10-13 Issue:22 Volume:218 Page:2100408
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chen Qiusong¹²^ORCID,Lin Dong³,Wang Qinhao¹,Yang Jiang¹,Sanchez Juan E.⁴^ORCID,Zhu Guodong¹

Affiliation:

1. The Department of Materials Science Fudan University 220 Handan Road Shanghai 200433 China

2. School of Physics and Electronic Science Guizhou Education University 115 Gaoxin Road Guiyang 550018 China

3. The College of Information Engineering Jimei University Xiamen 361021 China

4. DEVSIM LLC PO Box 50096 Austin TX 78763 USA

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100408

Reference51 articles.

1. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

2. Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

3. Multilevel Information Storage in Ferroelectric Polymer Memories

4. An organic multilevel non-volatile memory device based on multiple independent switching modes

5. Multilevel Data Storage Memory Using Deterministic Polarization Control

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