Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

Author:

Sun Chi12ORCID,Ding Xiaoyu23,Wei Xing12,Tang Wenxin12,Zhang Xiaodong12,Zhao Desheng2,Li Shuping4,Yu Guohao2,Song Liang2,Cai Yong12,Zeng Zhongming12,Zhang Baoshun125

Affiliation:

1. School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China

2. Key Laboratory of Multifunctional Nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-Bionics, CAS Suzhou Jiangsu 215123 China

3. School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

4. Suzhou Industria ark Institute of Services Outsourcing Suzhou Jiangsu 215123 China

5. Suzhou Powerhouse Electronics Co., Ltd. Suzhou 215123 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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