Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method-Reference-Cited by-同舟云学术

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

Published:2021-02-22 Issue:8 Volume:218 Page:2000666
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sun Chi¹²^ORCID,Ding Xiaoyu²³,Wei Xing¹²,Tang Wenxin¹²,Zhang Xiaodong¹²,Zhao Desheng²,Li Shuping⁴,Yu Guohao²,Song Liang²,Cai Yong¹²,Zeng Zhongming¹²,Zhang Baoshun¹²⁵

Affiliation:

1. School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China

2. Key Laboratory of Multifunctional Nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-Bionics, CAS Suzhou Jiangsu 215123 China

3. School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

4. Suzhou Industria ark Institute of Services Outsourcing Suzhou Jiangsu 215123 China

5. Suzhou Powerhouse Electronics Co., Ltd. Suzhou 215123 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000666

Reference26 articles.

1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2. High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

3. 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

4. Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

5. Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors