Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors-Reference-Cited by-同舟云学术

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Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors

Published:2009 Issue:4 Volume:27 Page:2048
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hasegawa Hideki,Akazawa Masamichi

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of the GaN-on-Si Epi-Stack on ΔR _ON Caused by Back-Gating Stress;IEEE Transactions on Electron Devices;2023-10

2. GaN-Based Lateral and Vertical Devices;Springer Handbook of Semiconductor Devices;2022-11-11

3. Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method;physica status solidi (a);2021-02-22

4. Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy;Scientific Reports;2018-09-05

5. Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers;IEEE Transactions on Electron Devices;2018-06

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