Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes-Reference-Cited by-同舟云学术

Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

Published:2022-04-14 Issue:20 Volume:219 Page:2100846
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Iwao Tomoki¹²,Sittimart Phongsaphak¹²^ORCID,Yoshitake Tsuyoshi²,Umezawa Hitoshi³,Ohmagari Shinya¹³^ORCID

Affiliation:

1. Sensing System Research Center National Institute of Advanced Industrial Science and Technology (AIST) 807-1 Shuku-machi Tosu Saga 841-0052 Japan

2. Department of Applied Science for Electronics and Materials Kyushu University Kasuga-koen Kasuga Fukuoka 816-8580 Japan

3. Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology (AIST) 1-8-31 Midorigaoka Ikeda Osaka 563-8577 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100846

Reference29 articles.

1. Recent advances in diamond power semiconductor devices

2. High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

3. Concepts for diamond electronics

4. Diamond as an electronic material

5. Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

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