Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications-Reference-Cited by-同舟云学术

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Published:2023-04 Issue:8 Volume:220 Page:
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Lee Ming-Wen¹^ORCID,Lin Yueh-Chin¹,Lai Kuan-Hsien²,Weng You-Chen¹,Hsu Heng-Tung¹,Chang Edward Yi³⁴

Affiliation:

1. International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

2. Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

3. International College of Semiconductor Technology Department of Materials Science and Engineering Department of Electronics Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

4. The Institute of Microengineering and Nanoelectronics Universiti Kebangsaan Malaysia Bangi 43600 Malaysia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202370016

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