Affiliation:
1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
2. Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Jiangsu 215123 China
Abstract
For the first time, Tb3+ and Eu3+ co‐doped AlN films were prepared using ion implantation, and the crystal structure and cathodoluminescence (CL) properties of films were investigated. Raman scattering and X‐Ray diffraction (XRD) show that high‐dose Tb3+ implantation leads to an increase in internal compressive stress. The non‐radiative resonant energy transfer was suggested between the Tb3+ and defects in the AlN host. The energy transfer mechanism between Tb3+ and Eu3+ in AlN films is discussed. Adjusting the dose ratio of Eu3+ with respect to Tb3+ allows for effective control of chromaticity coordinates and color temperatures.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials