Coulomb Drag by Injected Ballistic Carriers in Graphene n + −i−n−n + Structures: Doping and Temperature Effects-Reference-Cited by-同舟云学术

Coulomb Drag by Injected Ballistic Carriers in Graphene n + −i−n−n + Structures: Doping and Temperature Effects

Published:2021-09-04 Issue:21 Volume:218 Page:2100535
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ryzhii Victor¹²^ORCID,Otsuji Taichi¹^ORCID,Ryzhii Maxim³^ORCID,Mitin Vladimir⁴^ORCID,Shur Michael S.⁵^ORCID

Affiliation:

1. Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan

2. Institute of Ultra High Frequency Semiconductor Electronics of RAS Moscow 117105 Russia

3. Department of Computer Science and Engineering University of Aizu Aizu-Wakamatsu 965-8580 Japan

4. Department of Electrical Engineering University at Buffalo SUNY Buffalo New York 14260 USA

5. Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute Troy New York 12180 USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100535

Reference38 articles.

1. Coulomb Drag in Graphene Near the Dirac Point

2. Coulomb Drag Mechanisms in Graphene

3. Effect of the Coulomb scattering on graphene conductivity

4. Influence of electron-electron scattering on transport characteristics in monolayer graphene

5. Hydrodynamic model for electron-hole plasma in graphene

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