Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection-Reference-Cited by-同舟云学术

Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

Published:2022-03-14 Issue:11 Volume:120 Page:111102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ryzhii M.¹^ORCID,Ryzhii V.²^ORCID,Otsuji T.²^ORCID,Mitin V.³^ORCID,Shur M. S.⁴^ORCID

Affiliation:

1. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580, Japan

2. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

3. Department of Electrical Engineering, University at Buffalo, SUNY, Buffalo, New York 14260, USA

4. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Abstract

We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.

Funder

Japan Society for the Promotion of Science

Research Institute of Electrical Communication, Tohoku University

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0087678

Reference58 articles.

1. Graphene based plasma-wave devices for terahertz applications