Film Thickness Dependence of Surface Plasmon Resonance Behavior at a Grating Structure of Highly Ga‐Doped ZnO-Reference-Cited by-同舟云学术

Film Thickness Dependence of Surface Plasmon Resonance Behavior at a Grating Structure of Highly Ga‐Doped ZnO

Published:2020-06-23 Issue:1 Volume:218 Page:2000150
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Liu Chi-Wu¹,Chen Chi-Chung¹,Cheng Yung-Chen²,Chen Po-Yu¹,Chang Wen-Yen¹,Kuo Yang³,Kiang Yean-Woei¹⁴^ORCID,Yang Chih-Chung (C. C.)¹⁴

Affiliation:

1. Institute of Photonics and Optoelectronics National Taiwan University No. 1, Section 4, Roosevelt Road Taipei 10617 Taiwan

2. Department of Materials Science National University of Tainan No. 33, Section 2, Shu-Lin Street Tainan 70005 Taiwan

3. Department of Energy and Refrigerating Air-conditioning Engineering Tungnan University 152 Beishen Road, Section 3 Taipei 22202 Taiwan

4. Department of Electrical Engineering National Taiwan University No. 1, Section 4, Roosevelt Road Taipei 10617 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000150

Reference23 articles.

1. Surface plasmon enhanced light-emitting diode

2. Surface-plasmon-enhanced light emitters based on InGaN quantum wells

3. Surface-Plasmon-Enhanced Light-Emitting Diodes

4. Practicable enhancement of spontaneous emission using surface plasmons

5. Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode

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