Analyses and Excess Oxygen Investigations by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy at AlO x /Si Interfaces in Passivated Emitter and Rear Solar Cells-Reference-Cited by-同舟云学术

Analyses and Excess Oxygen Investigations by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy at AlO x /Si Interfaces in Passivated Emitter and Rear Solar Cells

Published:2021-07-14 Issue:17 Volume:218 Page:2100223
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Naumann Volker¹^ORCID,Schütze Matthias²,Hähnel Angelika¹,Lange Stefan¹,Müller Alexander¹,Hagendorf Christian¹

Affiliation:

1. Fraunhofer Center for Silicon Photovoltaics CSP Otto-Eißfeldt-Str. 12 06120 Halle Germany

2. Research and Development Hanwha Q CELLS GmbH Sonnenallee 17 – 21 D-06766 Bitterfeld-Wolfen Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100223

Reference13 articles.

1. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

2. Electronic and chemical properties of the c-Si/Al2O3 interface

3. Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts

4. Tunnel oxide passivated contacts as an alternative to partial rear contacts

5. Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition

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