A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN-Reference-Cited by-同舟云学术

A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN

Published:2022-11-03 Issue: Volume: Page:2200485
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Peters Lukas¹²^ORCID,Margenfeld Christoph¹²^ORCID,Krügener Jan³^ORCID,Ronning Carsten⁴^ORCID,Waag Andreas¹²^ORCID

Affiliation:

1. Institute of Semiconductor Technology Technische Universität Braunschweig Hans-Sommer-Straße 66 D-38106 Braunschweig Germany

2. Laboratory for Emerging Nanometrology (LENA) Technische Universität Braunschweig Langer Kamp 6 D-38106 Braunschweig Germany

3. Institute for Electronic Materials and Devices Leibniz Universität Hannover Schneiderberg 32 D-30167 Hannover Germany

4. Institute of Solid State Physics Friedrich Schiller University of Jena Max-Wien-Platz 1 D-07743 Jena Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200485

Reference39 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. On the origin of the 265 nm absorption band in AlN bulk crystals

3. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

4. Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

5. Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

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