Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Published:2020-08-18 Issue:12 Volume:257 Page:2000278
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Tillner Nadine¹²,Frankerl Christian¹³^ORCID,Nippert Felix³,Davies Matthew J.¹,Brandl Christian¹,Lösing Rainer¹,Mandl Martin¹,Lugauer Hans-Jürgen¹,Zeisel Roland¹,Hoffmann Axel³,Waag Andreas²⁴,Hoffmann Marc Patrick¹

Affiliation:

1. OSRAM Opto Semiconductors GmbH Leibnizstraße 4 93055 Regensburg Germany

2. Institut für Halbleitertechnik TU Braunschweig Hans-Sommer-Straße 66 38106 Braunschweig Germany

3. Institut für Festkörperphysik Technische Universität Berlin Hardenbergstraße 36 10623 Berlin Germany

4. Epitaxy Competence Center TU Braunschweig Hans-Sommer-Straße 66 38106 Braunschweig Germany

Funder

Bundesministerium für Wirtschaft und Energie

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000278

Reference24 articles.

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4. Pulsed ultra-violet inactivation spectrum of Escherichia coli

5. A new UV-LED device for automatic disinfection of stethoscope membranes

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