Deposition of a‐C:H:SiOx Coatings Using Low‐Frequency Inductively Coupled Plasma

Author:

Grenadyorov Alexander S.1ORCID,Semenov Vyacheslav A.1ORCID,Oskirko Vladimir O.1ORCID,Oskomov Konstantin V.1ORCID,Solovyev Andrey A.1ORCID

Affiliation:

1. Laboratory of Applied Electronics The Institute of High Current Electronics SB RAS 2/3, Akademichesky Ave. 634055 Tomsk Russia

Abstract

This article investigates the plasma‐enhanced chemical vapor deposition of a‐C:H:SiOx coatings in a non‐self‐sustaining arc discharge plasma with a hot cathode in combination with a low‐frequency (200 kHz) inductively coupled plasma. It is shown that increasing the inductor power from 0 to 600 W leads to a twofold increase in the ion current density on the substrate. An increase in ion bombardment intensity results in a 1.3‐fold reduction in the coating's growth rate due to the resputtering phenomenon, a 1.5‐fold reduction in surface roughness, and an improvement in the mechanical properties of the coatings. The hardness of the coating is increased by 9–11%, the plasticity index by 10–17%, and the resistance to plastic deformation by 32–49%.

Publisher

Wiley

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