Electronic properties of multiple delta-doped layers in silicon and GaAs-Reference-Cited by-同舟云学术

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Electronic properties of multiple delta-doped layers in silicon and GaAs

Published:1994-02-12 Issue:S28 Volume:52 Page:667-673
ISSN:0020-7608
Container-title:International Journal of Quantum Chemistry
language:en
Short-container-title:Int. J. Quantum Chem.

Author:

Scolfaro L. M. R.,Beliaev D.,Leite J. R.,Lino A. T.,Takahashi E. K.

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Reference16 articles.

1. Delta- (°-) doping in MBE-grown GaAs: Concept and device application

2. Delta doping of III–V compound semiconductors: Fundamentals and device applications

3. Growth and characterization of a delta‐function doping layer in Si

4. p‐type delta‐doped layers in silicon: Structural and electronic properties

5. Subband physics for a “realistic” δ-doping layer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intersubband optical properties of a laser-dressed asymmetric triple quantum well nanostructure;Physica E: Low-dimensional Systems and Nanostructures;2019-10

2. Band structure of holes inp-type δ-doping quantum wells and superlattices;Physical Review B;1996-04-15

3. Behavior of carriers in ?-doped quantum wells under in-plane magnetic fields;International Journal of Quantum Chemistry;1996

4. Electrical conductivity of δ doping superlattices parallel to the growth direction;Materials Science and Engineering: B;1995-12

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