Activation of the WS2 Inert Plane via W‐Site Regulation Promotes the H2 Evolution Reaction of the WS2/g–C3N4 Photocatalyst

Author:

Wang Xing12,Luan Qingjie1,Zhou Dongxue1,Li Baozhen1,Xue Xiangdong1,Zhang Xuyuan3,Kong Lingce4,Dong Wenjun1ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory of Function Materials for Molecule & Structure Construction School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 P. R. China

2. United Technology Center of Western Metal Materials Co., Ltd. Northwest Institute for Non-ferrous Metal Research Shaanxi Institute for Materials Engineering Xi'an 710016 P. R. China

3. Beijing 101 Middle School Beijing 100053 P. R. China

4. State Key Laboratory of NBC Protection for Civilian Beijing 102205 P. R. China

Abstract

WS2, as a potential cocatalyst to enhance the activation of H*, is usually used for H2 evolution. However, the activity of W atoms in the sandwich WS2 structure is blocked by the surface S atoms. An in situ F‐induced W‐exposure method is developed to boost the W‐site of WS2 (Wexp‐WS). Wexp‐WS is anchored on the surface of the porous g‐C3N4, and then the Wexp‐WS/g‐C3N4 photocatalyst with efficient H* activation is obtained. Particularly, the W‐exposed structure ensures the W coordination number decreases from 5.92 in WS2 to 5.15 in Wexp‐WS, which improves the H* activation ability of the W‐site and then results in an optimized W‐site ΔGH* (−0.08 kJ mol−1). Meanwhile, the II‐type heterojunction promotes the directional transfer of photogenerated electrons from g‐C3N4 to Wexp‐WS. Thus, the H2 production rate of the Wexp‐WS/g‐C3N4 photocatalyst exhibits 11.97 mmol h−1 g−1, which is 12 times higher than that of the porous g‐C3N4.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Beijing Municipal Natural Science Foundation

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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